是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-126 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.24 |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 63 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 12.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BD14010STU | FAIRCHILD |
完全替代 |
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD14010S | ONSEMI |
功能相似 |
1.5 A, 80 V PNP Power Bipolar Junction Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD14010STU | ONSEMI |
获取价格 |
1.5 A, 80 V PNP Power Bipolar Junction Transistor | |
BD14010STU | FAIRCHILD |
获取价格 |
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD14016 | FAIRCHILD |
获取价格 |
Medium Power Linear and Switching Applications | |
BD140-16 | NXP |
获取价格 |
PNP power transistors | |
BD140-16 | STMICROELECTRONICS |
获取价格 |
Complementary low voltage transistor | |
BD140-16 | UTC |
获取价格 |
暂无描述 | |
BD140-16 | CENTRAL |
获取价格 |
80V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/S | |
BD140-16-BP | MCC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD140-16LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD14016S | FAIRCHILD |
获取价格 |
PNP Epitaxial Silicon Transistor |