是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SIP | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.56 |
Is Samacsys: | N | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD140-10LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD14010S | FAIRCHILD |
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Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD14010S | ONSEMI |
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1.5 A, 80 V PNP Power Bipolar Junction Transistor | |
BD14010STU | ONSEMI |
获取价格 |
1.5 A, 80 V PNP Power Bipolar Junction Transistor | |
BD14010STU | FAIRCHILD |
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PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD14016 | FAIRCHILD |
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Medium Power Linear and Switching Applications | |
BD140-16 | NXP |
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PNP power transistors | |
BD140-16 | STMICROELECTRONICS |
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Complementary low voltage transistor | |
BD140-16 | UTC |
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暂无描述 | |
BD140-16 | CENTRAL |
获取价格 |
80V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/S |