Datasheet > BD139-16(TO-126)

BD139-16(TO-126)

更新时间： 2024-11-02 14:48:03

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
2页	84K
描述
Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BD139-16(TO-126) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	1.5 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	8 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

BD139-16(TO-126) 数据手册

UTC BD139

NPN EPITAXIAL SILICON TRANSISTOR

NPN POWER TRANSISTORS

FEATURES

*High current (max.1.5A)

*Low voltage (max.80V)

APPLICATION

*Driver stages in hi-fi amplifiers and television circuits.

TO-126

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VCBO

VCEO

VEBO

lc_M

l_BM

Ptot

Tstg

CONDITIONS

Open emitter

Open base

MIN

MAX

100

1.5

UNIT

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current(DC)

Peak collector current

Peak base current

Total power dissipation

Storage Temperature

Junction Temperature

Operating ambient temperature

Open collector

T_mb≤70°C

-65

+150

Tamb

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

Rth j-a

Rth j-mb

CONDITIONS

Note1

VALUE

100

UNIT

K/W

Thermal resistance from junction to ambient

Thermal resistance from junction to mounting base

Note 1: Refer to TO-126 standard mounting conditions.

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R204-007,A

中文翻译

下载PDF

与BD139-16(TO-126)相关器件

型号	品牌	获取价格	描述	数据表
BD13916S	ONSEMI	获取价格	1.5 A, 80 V NPN Power Bipolar Junction Transistor
BD13916S	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BD13916STU	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BD13916STU	ONSEMI	获取价格	1.5 A, 80 V NPN Power Bipolar Junction Transistor
BD13916STU_NL	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD139-16-T60-K	UTC	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD139-25	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 1.5A I(C) \| TO-126
BD1396	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD139-6	INFINEON	获取价格	NPN SILICON TRANSISTORS
BD1396S	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti