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BD13816S PDF预览

BD13816S

更新时间: 2024-11-12 11:10:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 311K
描述
1.5 A, 60 V PNP Bipolar Power Junctions Transistor

BD13816S 数据手册

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PNP Epitaxial Silicon  
Transistor  
BD136 Series  
BD136 / BD138 / BD140  
Applications  
www.onsemi.com  
Complement to BD135, BD137 and BD139 Respectively  
These are PbFree Devices  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Max  
Unit  
CollectorBase Voltage  
V
V
V
V
CBO  
BD136  
BD138  
BD140  
45  
60  
80  
TO126  
CASE 340AS  
1
2
3
CollectorEmitter Voltage  
V
CEO  
1
Emitter  
2 Collector  
3 Base  
BD136  
BD138  
BD140  
45  
60  
80  
EmitterBase Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
5  
V
A
A
A
EBO  
I
I
I
1.5  
3.0  
0.5  
C
MARKING DIAGRAM  
CP  
B
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
YWW  
BD1XX  
THERMAL CHARACTERISTICS  
Y
WW  
= Year  
= Work Week  
Rating  
Collector Dissipation  
Symbol  
Max  
12.5  
Unit  
W
P
P
C
BD1XX = Specific Device Code  
XX = 36, 38, 40  
Collector Dissipation (T = 25°C)  
1.25  
W
A
C
Junction Temperature  
T
150  
°C  
°C  
J
Storage Temperature Range  
T
STG  
55~150  
ORDERING INFORMATION  
Package  
Device  
BD13610STU  
BD13610S  
Shipping  
60 Units/ Tube  
500 Units/ Bulk Box  
60 Units/ Tube  
BD13616STU  
BD13616S  
500 Units/ Bulk Box  
60 Units/ Tube  
TO126  
(PbFree)  
BD13810STU  
BD13816STU  
60 Units/ Tube  
60 Units/ Tube  
BD14010STU  
BD14016STU  
BD14016S  
60 Units/ Tube  
500 Units/ Bulk Box  
© Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2019 Rev. 1  
BD136/D  

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