是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Contact Manufacturer | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 4.83 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 13 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 75 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD138-16-BP | MCC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD138-16-BP-HF | MCC |
获取价格 |
Power Bipolar Transistor, | |
BD13816S | ONSEMI |
获取价格 |
1.5 A, 60 V PNP Bipolar Power Junctions Transistor | |
BD13816STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD13816STU | ONSEMI |
获取价格 |
1.5 A, 60 V PNP Bipolar Power Junctions Transistor | |
BD138-25 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126 | |
BD1386 | FAIRCHILD |
获取价格 |
Medium Power Linear and Switching Applications | |
BD138-6 | INFINEON |
获取价格 |
PNP SILICON TRANSISTORS | |
BD138-6 | CDIL |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD138-6-BP | MCC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti |