是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 0.8 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 45 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 25 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 12.5 W | 最大功率耗散 (Abs): | 8 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 75 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BD13616STU | FAIRCHILD |
功能相似 |
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD13610STU | FAIRCHILD |
功能相似 |
Medium Power Linear and Switching Applications | |
BD136G | ONSEMI |
功能相似 |
Plastic Medium Power Silicon PNP Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD136/D | ETC |
获取价格 |
Plastic Medium Power Silicon PNP Transistor | |
BD136_01 | STMICROELECTRONICS |
获取价格 |
PNP SILICON TRANSISTORS | |
BD136_11 | UTC |
获取价格 |
PNP SILICON TRANSISTOR | |
BD13610 | FAIRCHILD |
获取价格 |
Medium Power Linear and Switching Applications | |
BD136-10 | STMICROELECTRONICS |
获取价格 |
PNP SILICON TRANSISTORS | |
BD136-10 | NXP |
获取价格 |
PNP power transistors | |
BD136-10 | INFINEON |
获取价格 |
PNP SILICON TRANSISTORS | |
BD136-10 | CDIL |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD136-10 | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD136-10-BP-HF | MCC |
获取价格 |
Power Bipolar Transistor, |