BD135G, BD137G, BD139G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
http://onsemi.com
Features
1.5 A POWER TRANSISTORS
NPN SILICON
• High DC Current Gain
• BD 135, 137, 139 are complementary with BD 136, 138, 140
45, 60, 80 V, 12.5 W
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
3
Collector−Emitter Voltage
BD135G
BD137G
V
CEO
Vdc
BASE
45
60
80
1
BD139G
EMITTER
Collector−Base Voltage
BD135G
BD137G
V
V
Vdc
CBO
45
60
100
BD139G
Emitter−Base Voltage
Collector Current
5.0
1.5
0.5
Vdc
Adc
Adc
EBO
TO−225
CASE 77−09
STYLE 1
I
C
Base Current
I
B
1
2
3
Total Device Dissipation
P
D
D
@ T = 25°C
1.25
10
Watts
mW/°C
A
Derate above 25°C
MARKING DIAGRAM
Total Device Dissipation
P
@ T = 25°C
12.5
100
Watts
mW/°C
C
Derate above 25°C
YWW
BD1xxG
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
WW
= Year
= Work Week
BD1xx = Device Code
xx = 35, 37, 39
THERMAL CHARACTERISTICS
G
= Pb−Free Package
Characteristic
Symbol
Max
10
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
JA
ORDERING INFORMATION
R
100
q
Package
Shipping
Device
BD135G
TO−225
500 Units / Box
(Pb−Free)
BD135TG
BD137G
BD139G
TO−225
(Pb−Free)
50 Units / Rail
TO−225
(Pb−Free)
500 Units / Box
500 Units / Box
TO−225
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 17
BD135/D