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BCY78-9 PDF预览

BCY78-9

更新时间: 2024-02-12 13:07:06
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 53K
描述
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | TO-18

BCY78-9 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.89配置:Single
最小直流电流增益 (hFE):250JESD-609代码:e0
极性/信道类型:PNP最大功率耗散 (Abs):0.39 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):180 MHz

BCY78-9 数据手册

 浏览型号BCY78-9的Datasheet PDF文件第2页浏览型号BCY78-9的Datasheet PDF文件第3页浏览型号BCY78-9的Datasheet PDF文件第4页 
IS/ISO 9002  
Lic# QSC/L- 000019.2  
IS / IECQC 700000  
IS / IECQC 750100  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS  
BCY77, BCY78  
BCY79  
TO-18  
Complementary BCY58/59  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
BCY77  
BCY78  
BCY79  
UNIT  
Collector -Emitter Voltage  
Collector -Emitter Voltage  
Emitter -Base Voltage  
Collector Current Continuous  
Base Current Continuous  
Power Dissipation@ Ta=25 degC  
@ TC=45 deg C  
VCEO  
VCES  
VEBO  
IC  
IB  
PD  
60  
60  
5.0  
100  
50  
32  
32  
5.0  
200  
50  
45  
45  
5.0  
200  
50  
V
V
V
mA  
mA  
mW  
W
600  
1.0  
Operating And Storage Junction  
Temperature Range  
Tj, Tstg  
-65 to +200  
deg C  
THERMAL RESISTANCE  
Junction to Ambient in Free Air  
Junction to Case  
Rth(j-a)  
Rth(j-c)  
450  
150  
K/W  
K/W  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
BCY77 BCY78  
BCY79 UNIT  
Collector -Emitter Voltage  
Collector -Emitter Voltage  
Emitter-Base Voltage  
Collector-Cut off Current  
VCEO  
VCES  
VEBO  
ICES  
IC=2mA,IB=0  
IC=10uA, VBE=0  
IE=1uA, IC=0  
VCE=VCE max,VBE=0  
VCE=50V, VBE=0  
VCE=25V, VBE=0  
VCE=35V, VBE=0  
>60  
>60  
>5.0  
<100  
<20  
-
>32  
>32  
>5.0  
<100  
-
>45  
>45  
>5.0  
<100  
.-  
V
V
V
nA  
nA  
nA  
nA  
<20  
-
-
-
<20  
TA=150 deg C  
VCE=60V, VBE=0  
VCE=25V, VBE=0  
VCE=35V, VBE=0  
VCE=VCE, max  
VBE=0.2V, Ta=100 deg C  
VEB=4V, IC=0  
<10  
-
-
-
.-  
-
<10  
<20  
uA  
uA  
uA  
uA  
<10  
-
<20  
ICEX  
IEBO  
<20  
Emitter Cut off Current  
Base Emitter on Voltage  
<20  
<20  
<20  
nA  
V
V
V
V
TYP 0.55  
0.6 to 0.75  
TYP 0.68  
TYP 0.72  
TYP 0.75  
VBE(on) IC=10uA, VCE=5V  
IC=2mA, VCE=5V  
IC=10mA,VCE=1V  
IC=50mA,VCE=1V (2)  
IC=100mA,VCE=1V (1)  
V
Continental Device India Limited  
Page 1 of 4  
Data Sheet  

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