生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.37 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.2 A |
基于收集器的最大容量: | 6 pF | 集电极-发射极最大电压: | 32 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 250 |
JEDEC-95代码: | TO-206AA | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
功耗环境最大值: | 1 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
最大关闭时间(toff): | 800 ns | 最大开启时间(吨): | 150 ns |
VCEsat-Max: | 0.7 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCY58IXLEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
BCY58-IXLEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
BCY58LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
BCY58P | ZETEX |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 S | |
BCY58PK | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 S | |
BCY58PL | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 S | |
BCY58PM1TA | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 S | |
BCY58PM1TC | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 S | |
BCY58PQ | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 S | |
BCY58PSTOA | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 S |