Datasheet > BCY58-IX

BCY58-IX

更新时间： 2023-11-02 19:29:00

品牌	Logo	应用领域
CENTRAL		晶体管
页数	文件大小	规格书
2页	540K
描述
32V,100mA,340mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

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BCY58-IX 数据手册

BCY58, VII, VIII, IX, X

BCY59, VII, VIII, IX, X

www.centralsemi.com

SILICON

NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCY58 and BCY59

series types are silicon NPN epitaxial planar transistors,

mounted in a hermetically sealed metal case, designed

for low noise amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted) SYMBOL

BCY58

BCY59

UNITS

°C

°C/W

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

CBO

CEO

EBO

7.0

100

200

340

1.0

Power Dissipation

Power Dissipation (T =25°C)

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +200

450

stg



Thermal Resistance

150

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=Rated V

=5.0V

CBO

EBO

CBO

CEO

EBO

CE(SAT)

BE(SAT)

CBO

, T =150°C

μA

I =10μA (BCY58)

7.0

I =10μA (BCY59)

I =2.0mA (BCY58)

I =2.0mA (BCY59)

I =1.0μA

I =10mA, I =250ꢀA

0.35

0.70

0.85

1.20

I =100mA, I =2.5mA

I =10mA, I =250ꢀA

0.60

0.75

I =100mA, I =2.5mA

BCY58-VII

BCY59-VII

MIN TYP MAX

BCY58-VIII

BCY59-VIII

MIN MAX

BCY58-IX

BCY59-IX

MIN MAX

BCY58-X

BCY59-X

MIN MAX

=5.0V, I =10μA

180 310

120 400

100

380 630

240 1000

=5.0V, I =2.0mA

120

220

250 460

160 630

=1.0V, I =10mA

=1.0V, I =100mA

R2 (8-November 2013)

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