Datasheet > BCX71G

BCX71G

更新时间： 2024-10-28 12:47:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管
页数	文件大小	规格书
1页	35K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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BCX71G 数据手册

SMD Type

TransistIoCrs

General Purpose Transistor

BCX71G

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

PNP Epitaxial Silicon Transistor

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-45

Unit

-45

-5

Collector current

-100

350

150

Collector Power Dissipation

Storage Temperature

P^C

T^STG

Electrical Characteristics Ta = 25

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Symbol

Testconditons

Min

Typ

Max

Unit

B^VCEO

B^VEBO

I^CES

IC= -2mA, IB=0

-45

-5

IE= -1ìA, IC=0

VCE= -32V, VBE=0

-20

V^CE= -5V, IC= -2mA

V^CE= -1V, IC= -50ìA

I^C= -10mA, IB= -0.25mA

I^C= -50mA, IB= -1.25mA

I^C= -10mA, IB= -0.25mA

I^C= -50mA, IB= -1.25mA

VCE= -5V, IC= -2mA

VCB= -10V, IE=0, f=1MHz

120

220

DC Current Gain

h^FE

-0.25

-0.55

-0.85

-1.05

-0.75

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V^{CE (sat)}

-0.6

-0.68

-0.6

VBE (sat)

Base-Emitter On Voltage

Output Capactance

Noise Figure

V^{BE (on)}

C^ob

N^F

IC=0.2mA, VCE=5V,f=1KHz, RS=2KÙ

IC= -10mA, IB1= -1mA

Turn On Time

t^ON

150

800

Turn Off Time

t^OFF

IB2= -1mA, VBB=3.6V,RL=990Ù

Marking

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