5秒后页面跳转
BCX70JTRLEADFREE PDF预览

BCX70JTRLEADFREE

更新时间: 2024-10-28 13:05:55
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
2页 324K
描述
Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon,

BCX70JTRLEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantHTS代码:8541.21.00.95
风险等级:5.02Is Samacsys:N
其他特性:LOW NOISE基于收集器的最大容量:2.5 pF
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):250JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN (315)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.55 V
Base Number Matches:1

BCX70JTRLEADFREE 数据手册

 浏览型号BCX70JTRLEADFREE的Datasheet PDF文件第2页 
BCX70 SERIES  
www.centralsemi.com  
SURFACE MOUNT  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BCX70 Series  
types are NPN Silicon Transistors manufactured  
by the epitaxial planar process, epoxy molded in a  
surface mount package, designed for general purpose  
switching and amplifier applications.  
MARKING CODES: BCX70G: AG  
BCX70H: AH  
BCX70J: AJ  
BCX70K: AK  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
V
V
V
45  
45  
5.0  
100  
200  
CBO  
CEO  
EBO  
C
CM  
V
I
mA  
mA  
mA  
mW  
°C  
I
I
200  
350  
BM  
P
D
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
μA  
nA  
V
V
V
V
V
V
V
V
MHz  
pF  
pF  
I
I
I
V
V
V
=45V  
=45V, T =150°C  
=4.0V  
20  
20  
20  
CBO  
CBO  
EBO  
CBO  
CEO  
CB  
CB  
EB  
A
BV  
BV  
BV  
I =10μA  
45  
45  
5.0  
0.05  
0.10  
0.60  
0.70  
0.55  
100  
C
I =10mA  
C
I =1.0μA  
EBO  
E
V
V
V
V
V
I =10mA, I =250μA  
0.35  
0.55  
0.85  
1.05  
0.75  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
BE(ON)  
C
B
B
B
B
I =50mA, I =1.25mA  
C
I =10mA, I =250μA  
C
I =50mA, I =1.25mA  
C
V
=5.0V, I =2.0mA  
CE  
CE  
CB  
EB  
CE  
C
f
C
C
V
V
V
V
=5.0V, I =10mA, f=100MHz  
250  
1.7  
11  
T
C
=10V, I =0, f=1.0MHz  
E
c
e
=0.5V, I =0, f=1.0MHz  
C
NF  
=5.0V, I =200μA, R =2.0kΩ,  
C S  
f=1.0kHz, BW=200Hz  
6.0  
dB  
BCX70G  
MIN MAX  
BCX70H  
BCX70J  
MIN MAX  
30  
BCX70K  
MIN MAX  
100  
MIN  
40  
MAX  
h
h
h
V
V
V
=5.0V, I =10μA  
C
FE  
FE  
FE  
CE  
CE  
CE  
=5.0V, I =2.0mA  
120  
50  
220  
180  
70  
310  
250  
90  
460  
380  
100  
630  
C
=1.0V, I =50mA  
C
R2 (20-November 2009)  

与BCX70JTRLEADFREE相关器件

型号 品牌 获取价格 描述 数据表
BCX70K TYSEMI

获取价格

Low current (max. 100 mA). Low voltage (max. 45 V).Collector-base voltage VCBO 45 V
BCX70K KEXIN

获取价格

NPN General Purpose Transistors
BCX70K ROHM

获取价格

NPN small signal transistor
BCX70K CENTRAL

获取价格

SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION:
BCX70K SECOS

获取价格

Plastic-Encapsulate Transistor
BCX70K SAMSUNG

获取价格

NPN EPITAXIAL SILICON TRANSISTOR
BCX70K FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
BCX70K NXP

获取价格

NPN general purpose transistors
BCX70K INFINEON

获取价格

NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
BCX70K VISHAY

获取价格

Small Signal Transistor (NPN)