Datasheet > BCX70J

BCX70J

更新时间： 2024-11-28 14:54:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	571K
描述
SOT-23

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中文翻译

获取价格

数据手册

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BCX70J 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

BCX70J,BCX70K ^{TRANSISTOR (NPN)}

FEATURES

Low current

Low voltage

1. BASE

2. EMITTER

3. COLLECTOR

MARKING : BCX70J：AJ, BCX70K:AK

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

200

250

-55-150

℃

P_C

Collector Power Dissipation

Operation Junction and Storage Temperature Range

T_J,T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CES

Test conditions

I_C=10μA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=2mA,I_B=0

I_E=1μA,I_C=0

V_CE=45V,V_BE=0

h_FE1

V_CE=5V,I_C=10μA

V_CE=5V,I_C=2mA

250

DC current gain

BCX70J

h_FE2

460

h_FE3

V_CE=1V,I_C=50mA

V_CE=5V,I_C=10μA

V_CE=5V,I_C=2mA

h_FE1

100

380

100

0.05

0.1

BCX70K

h_FE2

630

h_FE3

V_CE=1V,I_C=50mA

I_C= 10mA I_B= 0.25 mA

I_C= 50mA I_B=1.25 mA

I_C= 10mA I_B=-0.25 mA

I_C= 50mA I_B= 1.25 mA

V_CE=5V,I_C=2mA

V_CE(sat)1

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

V_BE

0.35

0.55

0.85

1.05

0.75

Collector-emitter saturation voltage

Base -emitter saturation voltage

0.6

0.7

Base-emitter voltage

0.55

Collector output capacitance

C_ob

V_CB=10V,I_E=0,f=1MHz

1.7

_CE=5V,I_C=200μA,

Noise Figure

f_T

f=1kHz,BW=200Hz,RS=2kΩ

Gain-Bandwidth Product

V_CE= 5 V, I_C=10mA,f =100 MHz

100

250

MHz

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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与BCX70J相关器件

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