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BCX69Q PDF预览

BCX69Q

更新时间: 2024-11-06 14:50:23
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先科 - SWST /
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5页 237K
描述
功率三极管

BCX69Q 数据手册

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BCX69Q-HAF  
PNP Silicon Epitaxial Power Transistor  
4
Features  
1
• Halogen and Antimony Free(HAF), RoHS compliant  
2
3
1.Base 2.Collector 3.Emitter 4. Collector  
SOT-223 Plastic Package  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
-VCBO  
-VCEO  
-VEBO  
-IC  
Value  
32  
20  
5
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
V
V
Collector Current  
1
A
Peak Collector Current (tp = 1ms)  
Peak Base Current (tp = 1ms)  
-ICM  
2
A
-IBM  
200  
mA  
0.625 1)  
Total Power Dissipation  
Ptot  
W
1.4 2)  
Junction Temperature  
Tj  
150  
Storage Temperature Range  
Tstg  
- 65 to + 150  
Thermal Resistance Ratings  
Parameter  
Symbol  
RθJA  
Max.  
Unit  
200 1)  
Maximum Junction to Ambient  
/W  
89 2)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate  
®
1 / 5  
Dated: 10/03/2022 Rev: 02  

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