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BCX69E6327 PDF预览

BCX69E6327

更新时间: 2024-11-05 12:52:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管
页数 文件大小 规格书
7页 533K
描述
PNP Silicon AF Transistors

BCX69E6327 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.41Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):85JESD-30 代码:R-PSSO-F3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:SINGLE
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BCX69E6327 数据手册

 浏览型号BCX69E6327的Datasheet PDF文件第2页浏览型号BCX69E6327的Datasheet PDF文件第3页浏览型号BCX69E6327的Datasheet PDF文件第4页浏览型号BCX69E6327的Datasheet PDF文件第5页浏览型号BCX69E6327的Datasheet PDF文件第6页浏览型号BCX69E6327的Datasheet PDF文件第7页 
BCX69...  
PNP Silicon AF Transistors  
1
For general AF applications  
High collector current  
2
3
2
High current gain  
Low collector-emitter saturation voltage  
Complementary type: BCX68 (NPN)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
Marking  
CF  
CG  
Pin Configuration  
Package  
BCX69-10  
BCX69-16  
BCX69-25  
1=B  
1=B  
1=B  
2=C  
2=C  
2=C  
3=E  
3=E  
3=E  
SOT89  
SOT89  
SOT89  
CH  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
20  
25  
5
V
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CEO  
CBO  
EBO  
1
A
I
C
2
Peak collector current, t 10 ms  
I
p
CM  
100  
200  
3
mA  
W
Base current  
Peak base current  
Total power dissipation-  
I
B
I
BM  
P
tot  
T = 114 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
12  
Unit  
K/W  
1)  
R
thJS  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2011-10-05  
1

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