Datasheet > BCX68_07

BCX68_07

更新时间： 2024-09-09 04:09:11

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
3页	1893K
描述
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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数据手册

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BCX68_07 数据手册

SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

BCX68

ISSUE 3 – FEBRUARY 2007

✪

FEATURES

High gain and low saturation voltages

COMPLEMENTARY TYPE –

PARTMARKING DETAIL –

BCX69

BCX68

– CE

BCX68-16 – CC

BCX68-25 – CD

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Co lle cto r-Ba s e Vo lta g e

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

Pe ak Pu ls e Cu rre n t

Co n tin u o u s Co lle cto r Cu rre n t

Po w er Dis s ip a tio n a t T_{a m b}=25°C

Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e

I_C

P_{to t}

°C

T_j:T_{s tg}

-65 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherw ise stated).

am b

PARAMETER

S YMBOL MIN. TYP. MAX. UNIT CONDITIONS .

Co lle cto r-Ba s e

Bre a kd o w n vo lta g e

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100µA

I_C=10m A

I_E=100µA

Co lle cto r-Em itte r

Bre a kd o w n Vo ltag e

Em itte r-Ba s e

Bre a kd o w n Vo ltag e

Co lle cto r Cu t-Off

Cu rre n t

0.1

V_CB=25V

µA

V_CB=25V, T_a=150°C

Em itte r Cu t-Off Cu rren t I_EBO

V_EB=5V

µA

Co lle cto r-Em itte r

S atu ra tio n Vo lta g e

V_{CE(s a t)}

V_{BE(o n )}

h_FE

0.5

I_C=1A, I_B=100m A*

Bas e -Em itte r Tu rn -On

Vo lta g e

1.0

I_C=1A, V_CE=1V*

S tatic Fo rw a rd Cu rren t

Tran s fe r Ra tio

I_C=5m A, V_CE=10V

I_C=500m A, V_CE=1V

I_C=1A, V_CE=1V*

375

BCX68-16 100

BCX68-25 160

250

400

I_C=500m A, V_CE=1V*

I_C=500m A, V_CE=1V

250

Tran s itio n Fre q u e n cy

Ou tp u t Ca p a cita n ce

f_T

100

MHz I_C=100m A, V_CE=5V,

f=100MHz

C_{o b o}

p F

V_CB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

12 3

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