Datasheet > BCX68-25

BCX68-25

更新时间： 2024-09-14 12:53:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
2页	112K
描述
High collector current. High current gain. Low collector-emitter saturation voltage.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BCX68-25 数据手册

SMD Type

Transistors

Product specification

BCX68

SOT-89

Unit: mm

+0.1

4.50

-0.1

+0.1

1.50

-0.1

+0.1

1.80

-0.1

Features

High collector current.

High current gain.

+0.1

0.48

-0.1

+0.1

0.53

-0.1

+0.1

0.44

-0.1

Low collector-emitter saturation voltage.

1. Base

+0.1

3.00

-0.1

2. Collector

3. Emiitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Peak collector current

Base current

I^CM

I^B

100

Peak base current

I^BM

200

Total power dissipation

Junction temperature

Storage temperature

Junction - soldering point

P^tot

150

T^j

T^stg

R^thJS

-65 to +150

K/W

http://www.twtysemi.com

1 of 2

sales@twtysemi.com

4008-318-123

中文翻译

下载PDF

与BCX68-25相关器件

型号	品牌	获取价格	描述	数据表
BCX68-25E6327	INFINEON	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
BCX68-25E6327	ROCHESTER	获取价格	1000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR
BCX6825E6327HTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3
BCX68-25E6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
BCX6825Q	DIODES	获取价格	NPN, 20V, 1A, SOT89
BCX6825QTA	DIODES	获取价格	20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
BCX6825TA	DIODES	获取价格	20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
BCX68-25TA	DIODES	获取价格	1000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR
BCX68-25TC	DIODES	获取价格	Transistor,
BCX68CB	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL