Datasheet > BCX68-16

BCX68-16

更新时间： 2024-09-09 12:53:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管
页数	文件大小	规格书
2页	112K
描述
High collector current. High current gain. Low collector-emitter saturation voltage.

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数据手册

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BCX68-16 数据手册

SMD Type

Transistors

Product specification

BCX68

SOT-89

Unit: mm

+0.1

4.50

-0.1

+0.1

1.50

-0.1

+0.1

1.80

-0.1

Features

High collector current.

High current gain.

+0.1

0.48

-0.1

+0.1

0.53

-0.1

+0.1

0.44

-0.1

Low collector-emitter saturation voltage.

1. Base

+0.1

3.00

-0.1

2. Collector

3. Emiitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Peak collector current

Base current

I^CM

I^B

100

Peak base current

I^BM

200

Total power dissipation

Junction temperature

Storage temperature

Junction - soldering point

P^tot

150

T^j

T^stg

R^thJS

-65 to +150

K/W

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