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BCX54 PDF预览

BCX54

更新时间: 2024-01-09 11:30:59
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 106K
描述
SURFACE MOUNT NPN SILICON TRANSISTOR

BCX54 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.09外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzVCEsat-Max:0.5 V
Base Number Matches:1

BCX54 数据手册

 浏览型号BCX54的Datasheet PDF文件第2页 
TM  
BCX54  
BCX55  
BCX56  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
DESCRIPTION:  
NPN SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR BCX54,  
BCX55, and BCX56 types are NPN Silicon  
Transistors manufactured by the epitaxial planar  
process, epoxy molded in a surface mount  
package, designed for high current general  
purpose amplifier applications.  
SOT-89 CASE  
MAXIMUM RATINGS (T =25°C)  
A
BCX54  
BCX55  
BCX56  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
45  
60  
100  
V
CBO  
CEO  
EBO  
45  
60  
80  
V
5.0  
1.0  
1.5  
100  
200  
1.2  
V
I
A
C
Peak Collector Current  
Base Current  
I
A
CM  
I
mA  
mA  
W
B
Peak Base Current  
Power Dissipation  
I
BM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
104  
°C  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
µA  
nA  
V
I
I
I
V
V
V
=30V  
100  
10  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=30V, T =125°C  
A
=5.0V  
100  
BV  
BV  
BV  
BV  
BV  
BV  
I =100µA (BCX54)  
45  
60  
CBO  
CBO  
CBO  
CEO  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
I =100µA (BCX55)  
V
C
I =100µA (BCX56)  
100  
45  
V
C
I =10mA (BCX54)  
V
C
I =10mA (BCX55)  
60  
V
C
I =10mA (BCX56)  
80  
V
C
V
V
I =500mA, I =50mA  
0.5  
1.0  
V
C
B
V
=2.0V, I =500mA  
V
CE  
CE  
CE  
CE  
B
h
h
h
V
V
V
=2.0V, I =5.0mA  
63  
63  
C
=2.0V, I =150mA  
250  
160  
250  
FE  
C
=2.0V, I =150mA  
FE  
C
(BCX54-10, BCX55-10, BCX56-10)  
63  
h
V
=2.0V, I =150mA  
CE C  
FE  
FE  
(BCX54-16, BCX55-16, BCX56-16) 100  
h
V
V
=2.0V, I =500mA  
40  
CE  
C
f
=5.0V, I =10mA, f=100MHz  
130  
MHz  
T
CE  
C
R1 ( 18-December 2001)  

BCX54 替代型号

型号 品牌 替代类型 描述 数据表
BCX54LEADFREE CENTRAL

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Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3

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