Datasheet > BCX51-Q

BCX51-Q

更新时间： 2024-03-03 10:10:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	234K
描述
45 V, 1 A PNP medium power transistorsProduction

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BCX51-Q 数据手册

BCX51-Q series

45 V, 1 A PNP medium power transistors

Rev. 1 — 16 October 2023

Product data sheet

1. General description

PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD)

plastic package.

2. Features and benefits

•

High current

•

Three current gain selections

High power dissipation capability

Exposed heatsink for excellent thermal and electrical conductivity

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Linear voltage regulators

High-side switches

Battery-driven devices

Power management

MOSFET drivers

Amplifiers

4. Quick reference data

Table 1. Quick reference data

T_amb= 25 °C unless otherwise specified.

Symbol

V_CEO

I_C

Parameter

Conditions

Min

Typ

Max

-45

-1

Unit

collector-emitter voltage

collector current

peak collector current

DC current gain

BCX51-Q

open base

I_CM

single pulse; t_p≤ 1 ms

-2

h_FE

V_CE= -2 V; I_C= -150 mA

T_amb= 25 °C

[1]

250

160

250

BCX51-10-Q

BCX51-16-Q

100

[1] pulsed; t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...12

下载PDF

与BCX51-Q相关器件

型号	品牌	描述	获取价格	数据表
BCX51T	NEXPERIA	45 V, 1 A PNP power bipolar transistorsProduction	获取价格
BCX51-T	NXP	TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SOT-89, 3 PIN, BIP General Pur	获取价格
BCX51T/R	ETC	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 1A I(C) \| SOT-89	获取价格
BCX51-T1	NEC	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL	获取价格
BCX51-T1AB	NEC	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL	获取价格
BCX51-T1AC	NEC	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL	获取价格