是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.12 | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 45 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PSSO-F3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCX51-16,115 | NXP |
获取价格 |
45 V, 1 A PNP medium power transistor SOT-89 3-Pin | |
BCX51-16,135 | NXP |
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45 V, 1 A PNP medium power transistor SOT-89 3-Pin | |
BCX51-16/T3 | NXP |
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TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-243, PLASTIC, MPT3, SMD, SC-62, UPAK-3 | |
BCX51-16-AD | ZETEX |
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SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |
BCX51-16E6327 | INFINEON |
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Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
BCX51-16E6327 | ROCHESTER |
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Si, POWER TRANSISTOR | |
BCX5116E6327HTSA1 | INFINEON |
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Small Signal Bipolar Transistor | |
BCX51-16E6433 | INFINEON |
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Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon | |
BCX51-16-G | COMCHIP |
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General Purpose Transistor | |
BCX5116H6327XTSA1 | INFINEON |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |