Datasheet > BCX51-10TR13

BCX51-10TR13

更新时间： 2024-01-08 14:26:12

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	72K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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BCX51-10TR13 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	40	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1.2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

BCX51-10TR13 数据手册

BCX51

BCX52

BCX53

Central

Semiconductor Corp.

SURFACE MOUNT

DESCRIPTION:

PNP SILICON TRANSISTOR

The CENTRAL SEMICONDUCTOR BCX51,

BCX52, and BCX53 types are PNP Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high current general

purpose amplifier applications.

MARKING CODE: PLEASE SEE MARKING

CODE TABLE ON FOLLOWING PAGE

SOT-89 CASE

MAXIMUM RATINGS (T =25°C)

BCX51

BCX52

BCX53

100

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Peak Collector Current

Base Current

Peak Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

CBO

CEO

EBO

5.0

1.0

1.5

100

200

1.2

T ,T

J stg

-65 to +150

104

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

100

UNITS

µA

=30V

CBO

EBO

=30V, T =125°C

=5.0V

100

I =100µA (BCX51)

100

CBO

CEO

CE(SAT)

BE(ON)

I =100µA (BCX52)

I =100µA (BCX53)

I =10mA (BCX51)

I =10mA (BCX52)

I =10mA (BCX53)

I =500mA, I =50mA

0.5

1.0

=2.0V, I =500mA

=2.0V, I =5.0mA

=2.0V, I =150mA

250

160

250

=2.0V, I =150mA

(BCX51-10, BCX52-10, BCX53-10)

=2.0V, I =150mA

(BCX51-16, BCX52-16, BCX53-16)

=2.0V, I =500mA

100

=5.0V, I =10mA, f=100MHz

MHz

R3 (20-May 2004)

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与BCX51-10TR13相关器件

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BCX51-16	TYSEMI	获取价格	High current (max. 1 A). Low voltage (max. 80 V). Emitter-base voltage VEBO -5 V
BCX51-16	NEXPERIA	获取价格	45 V, 1 A PNP medium power transistorProduction
BCX51-16	MCC	获取价格	PNP Plastic-Encapsulate Transistors
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