5秒后页面跳转
BCX41 PDF预览

BCX41

更新时间: 2024-11-12 22:28:55
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管局域网
页数 文件大小 规格书
1页 51K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

BCX41 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.47
Is Samacsys:N最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:125 V配置:SINGLE
最小直流电流增益 (hFE):25JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.9 VBase Number Matches:1

BCX41 数据手册

  
SOT23 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
BCX41  
ISSUE 3 –OCTOBER 1995  
2
PARTMARKING DETAIL – EK  
1
3
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCES  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
125  
125  
V
5
1
V
Peak Pulse Current  
A
Continuous Collector Current  
Base Current  
IC  
800  
mA  
mA  
mW  
°C  
IB  
100  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
PTOT  
Tj:Tstg  
330  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Cut-Off ICES  
Current  
100  
10  
nA  
µA  
V
CE =100V  
VCE =100V, Tamb =150°C  
Collector Cut-Off  
Current  
ICEX  
10  
75  
V
CE =100V,VBE=0.2V,Tamb =85°C  
µA  
µA  
VCE=100V,VBE=0.2V,  
Tamb=125°C  
Emitter Cut-Off  
Current  
IEBO  
100  
0.9  
1.4  
nA  
V
VEB =4V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
hFE  
IC =300mA, IB =30mA *  
IC =300mA, IB =30mA *  
Base-Emitter  
Saturation Voltage  
V
Static Forward  
Current Transfer Ratio  
25  
63  
40  
I
C =10A, VCE =1V  
IC =100mA, VCE =1V *  
C =200mA, VCE =1V *  
I
Transition Frequency fT  
Output Capacitance Cobo  
100  
12  
MHz IC =10mA, VCE =5V  
f =20MHz  
pF  
VCB =10V, IE=Ie=0, f =1MHz  
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%  
3 - 33  

与BCX41相关器件

型号 品牌 获取价格 描述 数据表
BCX41_07 INFINEON

获取价格

NPN Silicon AF and Switching Transistor
BCX41E6327 INFINEON

获取价格

NPN Silicon AF and Switching Transistor
BCX41E6327HTSA1 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon,
BCX41E6433 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
BCX41E6433HTMA1 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
BCX41Q DIODES

获取价格

NPN, 125V, 0.8A, SOT23
BCX41TC ZETEX

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
BCX42 TYSEMI

获取价格

For general AF applications High breakdown voltage Low collector-emitter saturation voltag
BCX42 KEXIN

获取价格

PNP Silicon AF an Swiching Transistors
BCX42 INFINEON

获取价格

PNP Silicon AF and Switching Transistors (For general AF applications High breakdown volta