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BCX30 PDF预览

BCX30

更新时间: 2024-02-26 06:57:07
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
1页 106K
描述
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 200MA I(C) | TO-92

BCX30 技术参数

生命周期:Contact Manufacturer包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.8
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):70
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
最高工作温度:140 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BCX30 数据手册

  

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