Datasheet > BCW73LT1

BCW73LT1

更新时间： 2022-11-25 19:06:55

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
6页	312K
描述
General Purpose Transistors(NPN Silicon)

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BCW73LT1 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

NPN Silicon

BCW72LT1

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Vdc

5.0

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

556

300

2.4

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

°C

T_J, T_stg

–55 to +150

DEVICE MARKING

BCW72LT1 = K2

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= 2.0mAdc, V_EB= 0 )

V _(BR)CEO

V _(BR)CES

V _(BR)CBO

—

Vdc

Collector–Emitter Breakdown Voltage

(I_C= 2.0 mAdc, V_EB= 0 )

Collector–Base Breakdown Voltage

(I_C= 10 µAdc, I_E= 0 )

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc, I _C= 0)

V _(BR)EBO

I _CBO

5.0

—

Vdc

Collector Cutoff Current

—

100

nAdc

(V _CB= 20 Vdc, I _E= 0)

µAdc

(V _CB= 20 Vdc, I _E= 0, T _A=100°C )

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

M14–1/6

12 3 4 5 6

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