Datasheet > BCW69LT1/D

BCW69LT1/D

更新时间： 2024-09-23 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	203K
描述
General Purpose Transistors

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中文翻译

获取价格

数据手册

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BCW69LT1/D 数据手册

ON Semiconductort

BCW69LT1

BCW70LT1

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Symbol

Value

–45

Unit

Vdc

CEO

EBO

Emitter–Base Voltage

–5.0

–100

Vdc

Collector Current — Continuous

DEVICE MARKING

mAdc

BCW69LT1 = H1; BCW70LT1 = H2

THERMAL CHARACTERISTICS

Characteristic

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Symbol

Max

Unit

(1)

Total Device Dissipation FR-5 Board

225

T = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

COLLECTOR

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, T = 25°C

(2)

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

BASE

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

T , T

–55 to +150

stg

EMITTER

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = –2.0 mAdc, I = 0)

(BR)CEO

–45

–50

–5.0

—

Vdc

Collector–Emitter Breakdown Voltage (I = –100 µAdc, V = 0)

(BR)CES

(BR)EBO

Emitter–Base Breakdown Voltage (I = –10 µAdc, I = 0)

Collector Cutoff Current

(V = –20 Vdc, I = 0)

CBO

—

–100

–10

nAdc

µAdc

(V = –20 Vdc, I = 0, T = 100°C)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 1

BCW689LT1/D

12 3 4 5 6 7 8

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