Datasheet > BCW68

BCW68

更新时间： 2023-12-06 20:11:42

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	380K
描述
小信号晶体管

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BCW68 数据手册

BCW68

PNP Silicon Epitaxial Planar Transistor

for high current application

The transistor is subdivided into three groups F, G

and H according to its DC current gain.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

800

Peak Collector Current

Base Current

-I_CM

-I_B

100

℃

Peak Base Current

-I_BM

P_tot

200

Power Dissipation

200

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 14/05/2021 Rev: 04

12 3 4 5

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