Datasheet > BCW68

BCW68

更新时间： 2023-12-06 20:11:25

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	768K
描述
SOT-23

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数据手册

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BCW68 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

BCW68 TRANSISTOR (PNP)

FEATURES

1. BASE

2. EMITTER

3. COLLECTOR

Complementary to BCW66, BCW68 is subdivided into

three groups F, G and H according to its DC current gain.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

-60

Collector-Emitter Voltage

-45

Emitter-Base Voltage

-5

Collector Current

-800

330

379

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Test conditions

I_C=- 10μA, I_E=0

I_C= -10mA, I_B=0

I_E=-10μA, I_C=0

V_CB=-45 V, I_E=0

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-60

-45

-5

-0.02

μA

_EB=-4 V, I_C=0

Collector cut-off current

I_EBO

V_CE=-10V, I_C=-0. 1mA

h_FE1

V_CE=-1V, I_C=- 10mA

V_CE=-1V, I_C=- 100mA

V_CE=-2V, I_C=- 500mA

120

180

100

160

250

h_FE2

DC current gain

250

400

630

h_FE3

h_FE4

100

I_C=-100mA, I_B=-10mA

I_C=-500mA, I_B=-50mA

I_C=-100mA, I_B=-10mA

I_C=-500mA, I_B=-50mA

-0.3

-0.7

-1.25

-2

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

_CE= -5V,I_C=-50mA,f=20MHz

Transition frequency

Output capacitance

Input capacitance

MHz

f_T

200

V_CB= -10V,I_E=0,f=1MHz

V_EB= -0.5V,I_E=0,f=1MHz

C_ob

C_ib

MARKING

Rank

100-250

160-400

250-630

Range

Marking

www.jscj-elec.com

Rev. - 2.0

12 3 4

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