BCW65A

更新时间： 2024-11-25 08:50:51

品牌	Logo	应用领域
CENTRAL		晶体晶体管光电二极管
页数	文件大小	规格书
2页	323K
描述
SURFACE MOUNT NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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BCW65A 数据手册

BCW65 SERIES

BCW66 SERIES

www.centralsemi.com

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCW65 and

BCW66 Series types are NPN Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

general purpose switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

BCW65

BCW66

UNITS

°C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

CBO

CEO

EBO

5.0

800

1.0

100

200

350

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

MHz

=Rated V

= Rated V

=4.0V

CBO

EBO

CEO

, T =150°C

I =10µA (BCW65)

5.0

CBO

CEO

EBO

I =10µA (BCW66)

I =10mA (BCW65)

I =10mA (BCW66)

I =10µA

I =100mA, I =10mA

0.3

0.7

1.25

2.0

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =100mA, I =10mA

I =500mA, I =50mA

=5.0V, I =50mA, f=20MHz

170

6.0

=10V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

BCW65A

BCW66F

BCW65C

BCW66H

MIN MAX

MIN

MAX

=10V, I =100µA

100

=1.0V, I =10mA

180

=1.0V, I =100mA

250

100

630

=2.0V, I =500mA

R2 (20-November 2009)

中文翻译

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