Datasheet > BCW61DLT1

BCW61DLT1

更新时间： 2024-11-24 22:48:19

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
6页	255K
描述
General Purpose Transistors(PNP Silicon)

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中文翻译

获取价格

技术参数
数据手册

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BCW61DLT1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.28
Is Samacsys：	N	最大集电极电流 (IC)：	0.1 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.3 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

BCW61DLT1 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

PNP Silicon

BCW61BLT1

BCW61CLT1

BCW61DLT1

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

– 32

Unit

Vdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

– 32

Vdc

– 5.0

– 100

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

556

300

2.4

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

T_J, T_stg

–55 to +150

°C

DEVICE MARKING

BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= –2.0 mAdc, I_B= 0 )

V _(BR)CEO

– 32

—

Vdc

Emitter–Base Breakdown Voltage

(I _E= –1.0 µAdc, I _C= 0)

V _(BR)EBO

I _CES

– 5.0

Collector Cutoff Current

(V_CE= –32 Vdc, )

—

–20

nAdc

(V_CE= –32 Vdc, T_A= 150°C)

µAdc

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

M10–1/6

12 3 4 5 6

中文翻译

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