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BCW33LT1G PDF预览

BCW33LT1G

更新时间: 2024-09-24 06:41:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
6页 254K
描述
General Purpose Transistor

BCW33LT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.55Samacsys Confidence:2
Samacsys Status:ReleasedSamacsys PartID:410871
Samacsys Pin Count:3Samacsys Part Category:Transistor BJT NPN
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08
Samacsys Released Date:2017-05-04 08:31:21Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):420
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BCW33LT1G 数据手册

 浏览型号BCW33LT1G的Datasheet PDF文件第2页浏览型号BCW33LT1G的Datasheet PDF文件第3页浏览型号BCW33LT1G的Datasheet PDF文件第4页浏览型号BCW33LT1G的Datasheet PDF文件第5页浏览型号BCW33LT1G的Datasheet PDF文件第6页 
BCW33LT1G  
General Purpose Transistor  
NPN Silicon  
Features  
http://onsemi.com  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
COLLECTOR  
3
MAXIMUM RATINGS  
1
BASE  
Rating  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Symbol  
Value  
32  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
2
32  
Vdc  
EMITTER  
5.0  
Vdc  
3
Collector Current Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
100  
mAdc  
C
1
Symbol  
Max  
Unit  
2
Total Device Dissipation FR5 Board  
(Note 1)  
P
D
SOT23  
(TO236AB)  
CASE 318  
STYLE 6  
T
A
= 25°C  
225  
1.8  
mW  
mW/°C  
Derate above 25°C  
Thermal Resistance,  
R
556  
°C/W  
q
JA  
JunctiontoAmbient  
MARKING DIAGRAM  
Total Device Dissipation  
P
D
Alumina Substrate (Note 2),  
T
= 25°C  
300  
2.4  
mW  
mW/°C  
D3 M G  
A
Derate above 25°C  
G
Thermal Resistance,  
R
417  
°C/W  
q
JA  
JunctiontoAmbient  
D3  
M
G
= Specific Device Code  
= Date Code*  
= PbFree Package  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BCW33LT1G  
SOT23  
3000/Tape & Reel  
(PbFree)  
BCW33LT3G  
SOT23  
10,000/Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 4  
BCW33LT1/D  
 

BCW33LT1G 替代型号

型号 品牌 替代类型 描述 数据表
BCW33LT1 ONSEMI

完全替代

General Purpose Transistor(NPN Silicon)
SBCW33LT1G ONSEMI

类似代替

NPN 双极晶体管
BCW33LT3G ONSEMI

类似代替

General Purpose Transistor

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