Datasheet > BCW33LT1/D

BCW33LT1/D

更新时间： 2024-09-23 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	194K
描述
General Purpose Transistor NPN

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数据手册

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BCW33LT1/D 数据手册

ON Semiconductort

BCW33LT1

General Purpose Transistor

NPN Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

Vdc

Emitter–Base Voltage

5.0

Vdc

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

100

mAdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

T = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

COLLECTOR

(2)

Alumina Substrate, T = 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

BASE

T , T

–55 to +150

stg

EMITTER

BCW33LT1 = D3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

—

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

(I = 2.0 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = 10 mAdc, I = 0)

Emitter–Base Breakdown Voltage

(I = 10 mAdc, I = 0)

5.0

Collector Cutoff Current

(V = 32 Vdc, I = 0)

CBO

—

100

nAdc

µAdc

(V = 32 Vdc, I = 0, T = 100°C)

1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 1

BCW33LT1/D

12 3 4 5 6 7 8

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