生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.07 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 32 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 215 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
VCEsat-Max: | 0.3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCW30TRLEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCW31 | FAIRCHILD |
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NPN EPITAXIAL SILICON TRANSISTOR | |
BCW31 | KEC |
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EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) | |
BCW31 | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors | |
BCW31 | TYSEMI |
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Low current (max. 100 mA). Low voltage (max. 32 V).Collector-base voltage VCBO 32 V | |
BCW31 | NEXPERIA |
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NPN general purpose transistorsProduction | |
BCW31 | WINNERJOIN |
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Low current(100mA) | |
BCW31 | KEXIN |
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NPN General Purpose Transistors | |
BCW31 | CENTRAL |
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SURFACE MOUNT NPN SILICON TRANSISTOR | |
BCW31 | NXP |
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NPN general purpose transistors |