Datasheet > BCW30

BCW30

更新时间： 2023-12-06 20:02:28

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1079K
描述
双极型晶体管

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BCW30 数据手册

BCW30

PNP General Purpose Amplifier

SOT-23

Min

FEATURES

Dim

Max

3.10

1.50

2.70

Low current.

1.10

Low voltage.

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

APPLICATIONS

1.80

0.02

General purpose switching and amplification .

NPN complements:BCW32.

0.1 Typical

2.20

2.60

All Dimensions in mm

ORDERING INFORMATION

Type No.

BCW30

Marking

C2X

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-32

-5

Collector Current -Continuous

Total Device Dissipation

Junction and Storage Temperature

-100

℃

P_D

300

T_j,T_stg

-65 to +150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=-10μA I_E=0

I_C=-2mA I_B=0

I_E=-10μA I_C=0

V_CB=-32V I_E=0

-32

-5

-0.1

μA

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

V_CE=-5V I_C=-10µA

150

DC current gain

h_FE

_CE=-5V I_C=-2mA

215

-0.6

100

500

-0.3

I_C=-10mA I_B=-0.5mA

I_C=-50mA I_B=-2.5mA

-0.08

-0.15

Collector-emitter saturation voltage

V_CE(sat)

Base-emitter on voltage

Collector capacitance

V_BE(on)

C_ob

I_C=-2mA,V_CE=-5V

-0.7

V_CB=-10V I_E=-0 f=1MHz

4.5

I_C=-10mA,V_CE=-5V,

f=100MHz

Transition frequency

Noise figure

f_T

MHz

I_C=-200µA,V_CE=-5V,R_S=2kΩ,

f=1kHz,B=200Hz

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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