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BCR523E6327 PDF预览

BCR523E6327

更新时间: 2022-06-03 07:34:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体数字晶体管
页数 文件大小 规格书
8页 853K
描述
NPN Silicon Digital Transistors

BCR523E6327 数据手册

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BCR523...  
NPN Silicon Digital Transistors  
Switching circuit, inverter circuit,  
driver circuit  
Built in bias resistor (R = 1 k, R = 10 k)  
1
2
BCR523U: Two (galvanic) internal isolated  
transistors with good matching in one package  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR523  
BCR523U  
C
C1  
B2  
E2  
3
6
5
4
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07174  
EHA07184  
Type  
BCR523  
BCR523U  
Marking  
XGs  
XGs  
Pin Configuration  
1=B 2=E 3=C  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
Package  
SOT23  
-
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
50  
50  
Unit  
V
Collector-emitter voltage  
Collector-base voltage  
Input forward voltage  
Input reverse voltage  
Collector current  
V
V
V
V
CEO  
CBO  
i(fwd)  
i(rev)  
12  
5
500  
mA  
I
C
mW  
Total power dissipation-  
P
tot  
T 79 °C, BCR523  
330  
330  
S
T 115 °C , BCR523U  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
2011-07-28  
1

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