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BCR20E-8L PDF预览

BCR20E-8L

更新时间: 2024-11-26 19:25:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网三端双向交流开关栅极
页数 文件大小 规格书
5页 91K
描述
TRIAC, 400V V(DRM), 20A I(T)RMS

BCR20E-8L 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-MUFM-D2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.82外壳连接:ISOLATED
配置:SINGLE换向电压的临界上升率-最小值:10 V/us
最大直流栅极触发电流:30 mA最大直流栅极触发电压:1.5 V
JESD-30 代码:O-MUFM-D2最大漏电流:3 mA
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-25 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:20 A断态重复峰值电压:400 V
子类别:TRIACs表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
触发设备类型:TRIACBase Number Matches:1

BCR20E-8L 数据手册

 浏览型号BCR20E-8L的Datasheet PDF文件第2页浏览型号BCR20E-8L的Datasheet PDF文件第3页浏览型号BCR20E-8L的Datasheet PDF文件第4页浏览型号BCR20E-8L的Datasheet PDF文件第5页 
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR20A, BCR20B, BCR20C, BCR20E  
MEDIUM POWER USE  
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE  
Dimensions  
BCR20A, BCR20B, BCR20C, BCR20E  
OUTLINE DRAWING  
in mm  
1
φ2.0 MIN  
3
1
3
2
φ8.7 MAX  
φ11 MAX  
2
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
• IT (RMS) ...................................................................... 20A  
• VDRM ..............................................................400V/500V  
• IFGT !, IRGT !, IRGT # ...........................................30mA  
GATE TERMINAL  
BCR20A  
APPLICATION  
Contactless AC switches, light dimmer,  
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,  
solid state relay  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
12  
1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
400  
600  
500  
700  
V
V
1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
20  
Unit  
A
BCR20A, B, C  
BCR20E  
Tc=98°C  
Tb=64°C  
Commercial frequency, sine full  
IT (RMS)  
ITSM  
wave, 360° conduction  
60Hz sinewave 1 full cycle, peak value, non-repetitive  
220  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
203  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
5.0  
0.5  
W
W
V
10  
Peak gate current  
2.0  
A
Tj  
Junction temperature  
Storage temperature  
–20 ~ +125  
–20 ~ +125  
°C  
°C  
Tstg  
1. Gate open.  
Feb.1999  

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