Datasheet > BCR198SQ62702C2419

BCR198SQ62702C2419

更新时间： 2024-11-24 23:34:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	48K
描述
TRANSISTOR DIGITAL SOT363

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BCR198SQ62702C2419 数据手册

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BCR 198S

PNP Silicon Digital Transistor Array

• Switching circuit, inverter, interface circuit,

driver circuit

• Two (galvanic) internal isolated Transistors

in one package

Ω

• Built in bias resistor (R =47k , R =47k )

Type

Marking Ordering Code Pin Configuration

Package

BCR 198S WRs

Q62702-C2419 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Input on Voltage

CEO

CBO

EBO

i(on)

DC collector current

°C

Total power dissipation, T = 115°C

250

tot

Junction temperature

Storage temperature

150

- 65 ... + 150

stg

Thermal Resistance

≤

Junction ambient

275

140

K/W

thJA

Junction - soldering point

thJS

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm²Cu

Semiconductor Group

Nov-27-1996

12 3 4

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