生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | compliant | 风险等级: | 5.69 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 70 | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 190 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCR198S-E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | |
BCR198SH6327XTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS CO | |
BCR198SQ62702C2419 | INFINEON |
获取价格 |
TRANSISTOR DIGITAL SOT363 | |
BCR198T | INFINEON |
获取价格 |
PNP Silicon Digital Transistor | |
BCR198W | INFINEON |
获取价格 |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir | |
BCR198WE6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
BCR198WE6327HTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
BCR198WE6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
BCR198WH6327XTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO | |
BCR198WQ62702C2283 | ETC |
获取价格 |
TRANSISTOR DIGITAL SOT323 |