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BCR198SE6327HTSA1 PDF预览

BCR198SE6327HTSA1

更新时间: 2024-11-26 04:04:15
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
11页 867K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-6

BCR198SE6327HTSA1 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:compliant风险等级:5.69
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):190 MHzBase Number Matches:1

BCR198SE6327HTSA1 数据手册

 浏览型号BCR198SE6327HTSA1的Datasheet PDF文件第2页浏览型号BCR198SE6327HTSA1的Datasheet PDF文件第3页浏览型号BCR198SE6327HTSA1的Datasheet PDF文件第4页浏览型号BCR198SE6327HTSA1的Datasheet PDF文件第5页浏览型号BCR198SE6327HTSA1的Datasheet PDF文件第6页浏览型号BCR198SE6327HTSA1的Datasheet PDF文件第7页 
BCR198...  
PNP Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R1 = 47 k, R2 = 47 k)  
BCR198S: Two internally isolated  
transistors with good matching  
in one multichip package  
BCR198S: For orientation in reel see  
package information below  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR198  
BCR198S  
BCR198W  
C
C1  
6
B2  
5
E2  
4
3
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07173  
EHA07183  
Type  
BCR198  
BCR198S  
BCR198W  
Marking  
Pin Configuration  
1=B 2=E 3=C  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
Package  
SOT23  
WRs  
WRs  
WRs  
-
-
-
1=B 2=E 3=C  
-
-
-
SOT323  
2011-08-30  
1

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