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BCR16E PDF预览

BCR16E

更新时间: 2024-11-08 22:48:15
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
5页 91K
描述
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

BCR16E 数据手册

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MITSUBISHI SEMICONDUCTOR TRIAC  
BCR16A, BCR16B, BCR16C, BCR16E  
MEDIUM POWER USE  
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE  
BCR16A, BCR16B, BCR16C, BCR16E  
OUTLINE DRAWING  
Dimensions  
in mm  
1
3
φ2.0 MIN  
φ2.0 MIN  
1
3
φ8.7 MAX  
2
φ11.1 MAX  
2
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
• IT (RMS) ...................................................................... 16A  
• VDRM ..............................................................400V/500V  
• IFGT !, IRGT !, IRGT # ...........................................30mA  
GATE TERMINAL  
BCR16A  
APPLICATION  
Contactless AC switches, light dimmer, on/off and speed control of small induction motors,  
on/off control of traffic signals, on/off control of copier lamps,  
solid state relay, microwave ovens  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
10  
1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
400  
600  
500  
700  
V
V
1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
Unit  
A
BCR16A, B, C  
BCR16E  
Tc=99°C  
Tb=71°C  
Commercial frequency, sine full  
IT (RMS)  
ITSM  
16  
170  
121  
wave, 360° conduction  
60Hz sinewave 1 full cycle, peak value, non-repetitive  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
5
W
W
V
0.5  
10  
2
Peak gate current  
A
Tj  
Junction temperature  
–20 ~ +125  
°C  
1. Gate open.  
Feb.1999  

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