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BCR164T-E6433 PDF预览

BCR164T-E6433

更新时间: 2024-11-25 21:14:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体管
页数 文件大小 规格书
10页 295K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon

BCR164T-E6433 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.8最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):30元件数量:1
极性/信道类型:PNP最大功率耗散 (Abs):0.25 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

BCR164T-E6433 数据手册

 浏览型号BCR164T-E6433的Datasheet PDF文件第2页浏览型号BCR164T-E6433的Datasheet PDF文件第3页浏览型号BCR164T-E6433的Datasheet PDF文件第4页浏览型号BCR164T-E6433的Datasheet PDF文件第5页浏览型号BCR164T-E6433的Datasheet PDF文件第6页浏览型号BCR164T-E6433的Datasheet PDF文件第7页 
BCR164...  
PNP Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R = 4.7k, R = 10k)  
1
2
BCR164F/L3  
BCR164T  
C
3
R1  
R2  
1
2
B
E
EHA07183  
Type  
Marking  
U6s  
U6  
Pin Configuration  
Package  
BCR164F*  
BCR164L3*  
BCR164T*  
1=B 2=E 3=C  
1=B 2=E 3=C  
1=B 2=E 3=C  
-
-
-
-
-
-
-
-
-
TSFP-3  
TSLP-3-4  
SC75  
U6s  
* Preliminary  
Maximum Ratings  
Parameter  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Input on voltage  
Symbol  
Value  
50  
50  
Unit  
V
V
V
V
V
CEO  
CBO  
EBO  
i(on)  
5
15  
100  
mA  
Collector current  
I
C
mW  
Total power dissipation-  
P
tot  
BCR164F, T 128°C  
250  
250  
250  
S
BCR164L3, T 135°C  
S
BCR164T, T 109°C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Sep-03-2003  
1

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