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BCR116WH6327XTSA1 PDF预览

BCR116WH6327XTSA1

更新时间: 2024-11-07 15:46:31
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
11页 868K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN

BCR116WH6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:6 weeks
风险等级:5.64其他特性:BUILT-IN BIAS RESISTOR RATIO 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):70
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BCR116WH6327XTSA1 数据手册

 浏览型号BCR116WH6327XTSA1的Datasheet PDF文件第2页浏览型号BCR116WH6327XTSA1的Datasheet PDF文件第3页浏览型号BCR116WH6327XTSA1的Datasheet PDF文件第4页浏览型号BCR116WH6327XTSA1的Datasheet PDF文件第5页浏览型号BCR116WH6327XTSA1的Datasheet PDF文件第6页浏览型号BCR116WH6327XTSA1的Datasheet PDF文件第7页 
BCR116...  
NPN Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R =4.7 k, R =47 k)  
1
2
BCR116S: Two internally isolated  
transistors with good matching  
in one multichip package  
BCR116S: For orientation in reel see  
package information below  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR116  
BCR116S  
BCR116W  
C
C1  
6
B2  
5
E2  
4
3
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07174  
EHA07184  
Type  
BCR116  
BCR116S  
BCR116W  
Marking  
Pin Configuration  
1=B 2=E 3=C  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
Package  
SOT23  
WGs  
WGs  
WGs  
-
-
-
1=B 2=E 3=C  
-
-
-
SOT323  
2011-08-19  
1

BCR116WH6327XTSA1 替代型号

型号 品牌 替代类型 描述 数据表
PDTC143ZE,115 NXP

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PDTC143Z series - NPN resistor-equipped trans
DDTC143TUA-7 DIODES

功能相似

NPN PRE-BIASED SMALL SIGNAL SOT-323 DUAL SURFACE MOUNT TRANSISTOR

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