生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.46 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 10 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 70 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 160 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCR116WH6327XTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323 | |
BCR119 | INFINEON |
获取价格 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir | |
BCR119_07 | INFINEON |
获取价格 |
NPN silicon Digital Transistor | |
BCR119E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
BCR119E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
BCR119F | INFINEON |
获取价格 |
NPN silicon Digital Transistor | |
BCR119L3 | INFINEON |
获取价格 |
NPN silicon Digital Transistor | |
BCR119S | INFINEON |
获取价格 |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driv | |
BCR119S-E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
BCR119S-E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon |