生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | 风险等级: | 5.58 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
配置: | SINGLE | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
功耗环境最大值: | 1.5 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP56T/R | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos | |
BCP56T1 | MOTOROLA |
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MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT | |
BCP56T1 | ONSEMI |
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NPN Silicon Epitaxial Transistor | |
BCP56T1/D | ETC |
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NPN Silicon Epitaxial Transistor | |
BCP56T1G | ONSEMI |
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NPN Silicon Epitaxial Transistor | |
BCP56T1SERIES | MOTOROLA |
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MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT | |
BCP56T3 | ONSEMI |
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NPN Silicon Epitaxial Transistor | |
BCP56T3G | ONSEMI |
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NPN Silicon Epitaxial Transistor | |
BCP56TA | DIODES |
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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 | |
BCP56-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power |