Datasheet > BCP51

BCP51

更新时间： 2024-11-12 14:53:11

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	797K
描述
双极型晶体管

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技术参数
数据手册

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BCP51 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	45
Collector Current - Continuous：	1	DC current gain - Min：	63
DC current gain - Max：	250	Transition frequency：	100
Package：	SOT-223	Storage Temperature Range：	-65-150
class：	Transistors

BCP51 数据手册

BCP51,52,53

SOT-223 Transistor(PNP)

SOT-223

1. BASE

2. COLLECTOR

3. EMITTER

Features

For AF driver and output stages

High collector current

Low collector-emitter saturation voltage

Complementary types: BCP54...BCP56 (NPN)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

BCP51

BCP52

-60

-5

BCP53

-100

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

-45

-80

-1

P_C

Collector Power Dissipation

1.5

℃/W

℃

R_θJA

T_stg

Thermal Resistance Junction to Ambient

Storage Temperature Range

-65to+150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

BCP51

BCP52

BCP53

-45

-60

-100

-45

-60

-80

V_(BR)CBO

I_C=- 0.1mA,I_E=0

Collector-emitter breakdown voltage

BCP51

BCP52

BCP53

V_(BR)CEO

I_C= -10mA,I_B=0

Base-emitter breakdown voltage

Collector cut-off current

V_(BR)EBO

I_CBO

I_C= -10μA,I_E=0

-5

V_CB= -30 V, I_E=0

-100

250

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE

V_CE=-2V, I_C=-5mA

V_CE= -2V, I_C=-150m A

V_CE= -2V, I_C=-500m A

I_C=-500mA,I_B=-50mA

V_CE=-2V, I_C=-500m A

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

-0.5

-1

Transition frequency

f_T

V_CE=-10V,I_C=-50mA,f=100MHz

100

MHz

CLASSIFICATION OF h_FE(2)

BCP51-10, BCP52-10, BCP53-10

63-160

BCP51-16, BCP52-16, BCP53-16

100-250

Rank

Range

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mail:lge@lgesemi.com

Revision:20170701-P1

12 3

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