Datasheet > BCP51

BCP51

更新时间： 2024-11-17 06:41:39

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	39K
描述
PNP Medium Power Transistors

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中文翻译

获取价格

数据手册

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BCP51 数据手册

SMD Type

Transistors

PNP Medium Power Transistors

BCP51,BCP52,BCP53

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

-0.2

6.50

Features

+0.2

0.90

-0.2

High collector current

1.3 W power dissipation.

+0.1

-0.1

3.00

+0.3

7.00

-0.3

1 base

2 collector

+0.1

0.70

-0.1

2.9

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^CBO

Rating

-45

-60

-100

-45

-60

-80

-5

Unit

Collector-base voltage (open emitter)

BCP51

BCP52

BCP53

BCP51

BCP52

BCP53

Collector-emitter voltage(open base)

VCEO

Emitter-base voltage( open collector)

Collector current

V^EBO

I^C

-1

Peak collector current

Peak base current

I^CM

-1.5

-0.2

1.3

I^BM

Ptot

Total power dissipation T^amb

Storage temperature

T^stg

-65 to +150

Junction temperature

150

-65 to +150

Operating ambient temperature

Ramb

Rth(j-a)

R^th(j-s)

Thermal resistance from junction to ambient

Thermal resistance from junction to solder point

K/W

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