Datasheet > BCP194

BCP194

更新时间： 2024-09-23 08:50:15

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	597K
描述
Planar Medium Power Transistor

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BCP194 数据手册

BCP194

NPN Silicon

Planar Medium Power Transistor

Elektronische Bauelemente

RoHS Compliant Product

SOT-89

Description

The BCP194 is designed for medium

power amplifier applications.

Features

* 1 Amp Continuous Current

* 60 Volt VCEO

* Complementary to BCP195

Millimeter

Min. Max.

3.00 REF.

REF.

Min.

4.4

Max.

4.6

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

1.50 REF.

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings at TA=25^oC

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

V^CEO

V^EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

200

Total Power Dissipation

Storage Temperature

Junction and

TJ,

-55~+150

Tstg

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Typ.

Uni

Parameter

Symbol

Min

Max

Test Conditions

IC=100µA,IE=0

IC=10mA,IB=0

IE=100µA,IC=0

VCB= 60V,IE=0

VCES=60V

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

BVCBO

*BVCEO

BVEBO

ICBO

100

0.25

0.5

1.1

ICES

Emitter-Base Cutoff Current

VEB=4V,IC=0

IEBO

*VCE(sat)1

_*VCE(sat)2

IC=500mA,IB=50mA

Collector Saturation Voltage

IC=1A,IB=100mA

*VBE(sat)

*VBE(on)

*hFE1

*hFE2

*hFE3

*hFE4

Base-Emitter Saturation Voltage

DC Current Gain

IC=1A,VCE=5V

100

VCE= 5V, IC=1mA

300

VCE= 5V, IC=500mA

VCE= 5V, IC=1A

VCE= 5V, IC=2A

VCE= 10V, IC=50mA,f=100MH

Gain-Bandwidth Product

Output Capacitance

150

Cob

VCB=10V, f=1MHz,IE=0

≦

Measured under pulse condition.Pulse width 300 s, Duty Cycle 2%

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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