Datasheet > BCP157-C

BCP157-C

更新时间： 2025-07-17 18:29:11

品牌	Logo	应用领域
SECOS		光电二极管
页数	文件大小	规格书
3页	377K
描述
Type : PNP ; PD (W) : 0.5 ; VCBO (V) : -80 ; VCEO (V) : -60 ; IC (A) : -3 ; hFE : 100 / 300 ; VCE(sat) : -500 / -2 ; fT (MHz) : -0.3 ; Package : -1000 / -100 ;

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BCP157-C 数据手册

BCP157-C

-3A, -80V

PNP Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-89

FEATURES

⚫

-60V V_CEO

-3A continuous current

Low saturation voltage

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-89

7 inch

ORDER INFORMATION

Collector

Part Number

Type



BCP157-C

Lead (Pb)-free and Halogen-free



Base



Emitter

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise noted)

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

V_CBO

-80

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

-60

V_EBO

-5

Pulse¹

-3

Collector Current -Continuous

I_C

-6

0.5

Collector Power Dissipation ²

Junction & Storage temperature

P_C

T_J, T_STG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

I_C= -100μA, I_E=0

I_C= -10mA, I_B=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

-80

-60

-5

-0.1

I_E= -100μA, I_C=0

μA

V_CB= -60V, I_E=0

Emitter Cut-Off Current

I_EBO

V_EB= -4V, I_C=0

200

170

150

-150

-450

-0.9

-0.8

V_CE= -2V, I_C= -50mA

V_CE= -2V, I_C= -500mA

V_CE= -2V, I_C= -1A

100

300

DC Current Gain

h_FE

V_CE= -2V, I_C= -2A

-300

-600

-1.25

-1

I_C= -1A, I_B= -100mA

I_C= -3A, I_B= -300mA

I_C= -1A, I_B= -100mA

I_C= -1A, V_CE= -2V

Collector-Emitter Saturation Voltage

V_CE(sat)

Base-Emitter Saturation Voltage

Output Capacitance

V_BE(sat)

V_BE(on)

C_CO

f_T

V_CB= -10V, I_E=0, f=1MHz

V_CE= -5V, I_C= -100mA, f=100MHz

Transition Frequency

100

140

MHz

T_on

V_CC= -10V, I_C= -500mA,

I_B1= -I_B2= -50mA

Switching Time

Note:

T_off

450

Measured under pulse condition. Pulse width<300us, Duty cycle<2%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

31-Jul-2023 Rev. C

Page 1 of 3

12 3

中文翻译

下载PDF

与BCP157-C相关器件

型号	品牌	获取价格	描述	数据表
BCP160C	BEREX	获取价格	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCP160C_18	BEREX	获取价格	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCP160T	BEREX	获取价格	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCP1616A	SECOS	获取价格	NPN Epitaxial Planar Transistor
BCP1616A-K	SECOS	获取价格	NPN Epitaxial Planar Transistor
BCP1616A-K-C	SECOS	获取价格	NPN Epitaxial Planar Transistor
BCP1616A-L	SECOS	获取价格	NPN Epitaxial Planar Transistor
BCP1616A-L-C	SECOS	获取价格	NPN Epitaxial Planar Transistor
BCP1616A-U	SECOS	获取价格	NPN Epitaxial Planar Transistor
BCP1616A-U-C	SECOS	获取价格	NPN Epitaxial Planar Transistor