Datasheet > BCP030T

BCP030T

更新时间： 2022-10-15 09:50:18

品牌	Logo	应用领域
BEREX		功效
页数	文件大小	规格书
5页	619K
描述
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

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BCP030T 数据手册

BCP030T

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)

The BeRex BCP030T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 300 micron gate width

making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5

GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band

applications. The BCP030T is produced using state of the art metallization with SI₃N₄passivation and is screened to

assure reliability.

PRODUCT FEATURES



25 dBm Typical Output Power

14 dB Typical Gain @ 12 GHz

0.25 X 300 Micron Recessed Gate

APPLICATIONS



Commercial

Military / Hi-Rel.

Test & Measurement

ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T_a= 25° C

TEST

SYMBOL

PARAMETER/TEST CONDITIONS

MIN.

TYPICAL

MAX.

UNIT

dBm

FREQ.

12 GHz

18 GHz

12 GHz

18 GHz

12 GHz

18 GHz

Output Power @ P_1dB(V_ds= 8V, I_ds= 50%

24.5

25.5

14.0

10.5

P_1dB

I_dss)

13.0

G_1dB

Gain @ P_1dB(V_ds= 8V, I_ds= 50% I_dss

)

PAE

PAE @ P_1dB(V_ds= 8V, I_ds= 50% I_dss

)

50 Ohm Noise Figure (V_ds=2V, I_ds=15 mA

12 GHz

1.14

I_dss

G_m

Saturated Drain Current (V_gs= 0V, V_ds= 1.0V)

120

Transconductance (V_ds= 2V, V_gs= 50% I_dss

)

120

-0.5

V_p

Pinch-off Voltage (I_ds= 0.3 mA, V_ds= 3V)

-2.5

-1.1

BV_gd

BV_gs

Drain Breakdown Voltage (I_g= 0.3 mA, source open)

Source Breakdown Voltage (I_g= 0.3 mA, drain open)

Thermal Resistance (Au-Sn Eutectic Attach)

-15.0

-13.0

-12.0

R_th

121

°C/W

www.berex.com

BeRex, Inc. 1735 North 1^stStreet #302 San Jose, CA 95112 tel. (408) 452-5595

Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2

September 2011

12 3 4 5

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