Datasheet > BCP030C_18

BCP030C_18

更新时间： 2022-02-26 13:06:20

品牌	Logo	应用领域
BEREX		功效
页数	文件大小	规格书
4页	328K
描述
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

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BCP030C_18 数据手册

BCP030C

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)

The BeRex BCP030C is a GaAs Power pHEMT with a nominal 0.25-micron by 300-micron gate making this product

ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are

required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP030C is

produced using state of the art metallization with SI₃N₄passivation and is screened to assure reliability.

PRODUCT FEATURES

•

24.5 dBm Typical Output Power

13.5 dB Typical Gain @ 12 GHz

0.25 X 300 Micron Recessed Gate

APPLICATIONS

•

Commercial

Military / Hi-Rel.

Test & Measurement

ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T_a= 25° C

TEST

PARAMETER/TEST CONDITIONS

FREQ.

MIN.

TYPICAL

MAX.

UNIT

dBm

12 GHZ

23.0

12.0

9.0

24.5

13.5

10.5

P_1dB

G_1dB

PAE

Output Power @ P_1dB(V_ds= 8V, I_d= 45mA)

Gain @ P_1dB(V_ds= 8V, I_d= 45mA)

PAE @ P_1dB(V_ds= 8V, I_d= 45mA)

18 GHz

12 GHZ

18 GHz

12 GHZ

18 GHz

I_dss

Noise figure (Vds = 2V, I_d= 15 mA)

12 GHz

1.1

Saturated Drain Current (V_gs= 0V, V_ds= 2.0V)

Transconductance (V_ds= 2V, I_d= 45mA)

Pinch-off Voltage (I_ds= 0.3mA, V_ds= 2V)

120

-12

G_m

115

-1.2

-15

-13

115

V_p

-2.5

BV_gd

BV_gs

R_th

Drain Breakdown Voltage (I_g= -0.3mA, source open)

Source Breakdown Voltage (I_g= -0.3mA, drain open)

Thermal Resistance (Au-Sn Eutectic Attach)

°C/W

www.berex.com

Specifications are subject to change without notice. ©BeRex 2017

BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. (408) 452-5595

Rev. 1.1

February 2017

12 3 4

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