Datasheet > BCL016B

BCL016B

更新时间： 2024-11-26 12:51:27

品牌	Logo	应用领域
BEREX		/
页数	文件大小	规格书
5页	596K
描述
SUPER LOW NOISE PHEMT CHIP

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BCL016B 数据手册

BCL016B

SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm)

The BeRex BCL016B is a GaAs super low noise pHEMT with a nominal 0.15 micron gate length and 160 micron gate

width making the product ideally suited for applications requiring very low noise and high associated gain, in

frequencies of up to 40 GHz. The BCL016B offers high insertion gain and a low noise figure for broadband

applications. The BCL016B is produced using state of the art metallization with SI₃N₄passivation and is screened to

assure reliability

PRODUCT FEATURES



Low 0.4dB typical noise figure @12 GHz

High 13.5dB Typical associated Gain @12 GHz

High P_inof up to 20dBm

0.15 X 160 Micron Recessed Gate

APPLICATIONS



Commercial

Military / Hi-Rel.

Test & Measurement

ELECTRICAL CHARACTERISTICS (T_a= 25° C)

TEST

FREQ.

12 GHz

18 GHz

SYMBOL

PARAMETER/TEST CONDITIONS

Noise Figure (Vds = 2V, Id = 10mA)

MIN.

TYPICAL

Max.

UNIT

0.4

0.6

12.5

10.5

12 GHz

18 GHz

13.5

11.5

G_A

Associated Gain (Vds = 2V, Id = 10mA)

Output Power @ p1dB (Vds = 2V, Id = 10mA)

Saturated Drain Current (Vgs = 0V, Vds = 2V)

Transconductance (Vds = 2V, Vgs = -0.3V)

Pinch-off Voltage (Vds = 2V, Id = 200µA)

P1dB

I_DSS

12 GHz

14.5

dBm

G_M

120

-0.7

V_P

BV_GD

BV_GS

R_TH

Gate-Drain Breakdown Voltage, (Ig = -200 µA, source open)

Gate-Source Breakdown Voltage, (Ig = -200 µA, drain open)

Thermal Resistance, junction to back side

(Au-Sn Eutectic Attach)

270

° C/W

www.berex.com BeRex, Inc. 1735 North 1^stStreet #302 San Jose, CA 95112 T: (408) 452-5595; F: (408) 452-5596 Nov. 2012

Specifications are subject to change without notice. ©BeRex 2012 Rev. 1.7

12 3 4 5

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